表面与界面的偏析 （Surface and Interface segregation)
1.Min Lin, Xu Chen, Xinyi Li, Chi Huang, Yanxiu Li, Jiangyong Wang*；Local equilibrium in the dissolution and segregation kinetics of Ag on Cu(111) surface；Applied Surface Science, 297 (2014) 130-133；
2.X.L. Yan, M. Lin, J.Y. Wang；Equilibrium and kinetic surface segregations in Cu–Sn thin films；Applied Physics A, 2013, [DOI 10.1007 /s00339- 013- 7570-1]；
3.Xinyi Li, Min Li, Xu Chen, Chi Huang, Yanxiu Li, Jiangyong Wang*；Influence of bulk concentration on the discontinuous transition in surface segregation；Advanced Materials Research 648 (2013) pp 35-42.；
4.X.L. Yan, J.Y. Wang*；Size effects on surface segregation in Ni-Cu alloy thin flms；Thin Solid Films 529 (2013), pp. 483-487；
5.Min Lin, Xu Chen, Xinyi Li, Chi Huang, Yanxiu Li, Jiangyong Wang*；Local equilibrium in the dissolution kinetics of Ag on Cu(111) surface；Advanced Materials Research 648 (2013) pp 43-49.；
6.颜心良，王江涌*；二元合金薄膜的表面偏析；真空 49, No.4, PP. 63-67, Jul. 2012.；
7.JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；The equilibrium surface segregation of silver to the low index surfaces of a copper single crystal；Surface & Interface Analysis 28 (1999) 73；
8.JY Wang*；Equilibrium and kinetic surface segregation in binary alloy thin films；Applied Surface Science, 252 (2006) 5347；
9.JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；The Discontinuous surface transition in the Cu(111)(Ag) binary segregating system；Surface Science, 419 (1999) 197.；
10.EC Viljoen, JY Wang, WJ Erasmus, JJ Terblans and J du Plessis*；Ordered monolayer overstructures formed on Cu surfaces through segregation；Materials Science Forum, 294 (1999) 457；
11.JY Wang, J du Plessis*, JJ Terblans and GN van Wyk；Kinetics near the discontinuous surface transition in the Cu(111)(Ag) binary segregating system；Surface Science, 423 (1999) 12；
薄膜材料深度剖析的定量分析 (Quantification sputter depth profiling in thin films)
12.Y. Liu, S. Hofmann, J.Y. Wang*；An Analytical Depth Resolution Function for the MRI Model；Surface and Interface Analysis (Rapid Communication)，45(2013) 1659-1660；
13.Y. Liu, W. Jian, J.Y. Wang, S. Hofmann, J. Kovac；Influence of non-Gaussian roughness on sputter depth profiles；Applied Surface Science. 276 (2013) 447-453；
14.W. Jian, Y. Liu, X.Y. Wang, S.P. Rao, S. Hofmann, J.Y. Wang；Quantification of AES depth profiling data of polycrystalline Al films with Gaussian and non-Gaussian surface height distribution；Surface and Interface Analysis, 45 (2013) 1148-1151；
15.Xiaoyin Wang, Wei Jian, Yi Liu, Shaoping Rao, Xingxing Zhu, Yishan Han, Jiangyong Wang*；Determination of coated substrate roughness by quantification of measured depth profiles；Advanced Materials Research, 602-604 (2013) pp 1624-1629.；
16.Shaoping Rao, Yi Liu, Xiaoyin Wang, Wei Jian, Jiangyong Wang*；Quantification of N2+ implanted AES depth profiling data in Al；Advanced Materials Research，602-604 (2013) pp 1808-1813.；
17.刘毅，王江涌*；择优溅射对深度剖析谱和深度分辨率的影响；真空 49, No.2, PP. 71-76, Mar. 2013.；
18.Y. Liu, J.Y. Wang, S. Hofmann and J. Kovac；Quantification of the N2+ implanted AES depth profiles in Cobalt；Advanced Materials Research, 557-559 (2012) pp. 1653-1640.；
19.J.Y. Wang, Y. Liu, S. Hofmann and J. Kovac；Influence of nonstationary atomic mixing on depth resolution in sputter depth profiling；Surface and Interface Analysis. 2012, 44, PP. 569-572；
20.刘毅，王江涌；溅射深度剖析的定量分析及其应用；真空 49, No.2, PP. 71-76, Mar. 2012.；
21.JY Wang；Determination of Interdiffusion Coefficient in Nanolayered Structures by Auger Electron Spectroscopical SputterDepth Profiling；Advanced Materials Research，306-307 (2011) pp 1354-1359.；
22.JY Wang*, U Starke and EJ Mittemeijer；Evaluation of the depth resolutions of AES, XPS, TOF-SIMS sputter depth profiling techniques；Thin Solid Films, 517 (2009) 3402；
23.S. Hofmann and JY Wang* and A Zalar；Backscattering effect in quantitative AES sputter depth profiling of multilayers；Surface and Interface Analysis, 39 (2007) 787；
24.S. Hofmann* and JY Wang；Implementing the electron backscattering factor in quantitative sputter depth profiling using AES；Surface and Interface Analysis, 39 (2007) 324；
25.S. Hofmann* and JY Wang；AES depth profiling with a titled sample in front of a cylindrical mirror analyzer: quantification and profile shape changes according to an extension of the conventional MRI model；Surface and Interface Analysis, 39 (2007) 45；
26.S. Hofmann* and JY Wang；The MRI-Model in sputter depth profiling: capabilities, limitations and recent progress；Journal of Surface Analysis, 13 (2006) 142；
27.JY Wang*, A Zalar, and EJ Mittemeijer；Depth dependences of the ion bombardment induced roughness and of the interdiffusion coefficient for Si/Al multilayers；Applied Surface Science, 222 (2004) 171；
28.JY Wang* and EJ Mittemeijer；A new method for the determination of the diffusion-induced concentration profile and the interdiffusion coefficient for thin solid film systems by Auger electron spectroscopical sputter depth profiling；Journal of Materials Research, 19 (2004) 681；
29.JY Wang*, S. Hofmann, A Zalar and EJ Mittemeijer；Quantitative evaluation of sputtering induced surface roughness in depth profiling of polycrystalline multilayers using Auger electron spectroscopy；Thin Solid Films, 444 (2003) 120；
30.JY Wang*, A Zalar, YH Zhao and EJ Mittemeijer；Determination of the interdiffusion coefficient for Si/Al multilayers by Auger electron spectroscopical sputter depth profiling；Thin Solid Films, 433 (2003) 92；
31.S. Hofmann* and JY Wang；Progress in quantitative sputter depth profiling using the MRI-model；Journal of Surface Analysis, 10 (2003) 52；
32.T Wagner*, JY Wang, and S Hofmann；Sputter Depth Profiling in AES and XPS, Chapter 22, in Surface Analysis by Auger and X-ray Photoelectron；Ed: D. Briggs and J. Grant, IM Publications, West Sussex, UK and SurfaceSpectra Limited, Manchester, UK, 2003, p.619；
33.S. Hofmann* and JY Wang；Determination of the depth scale in sputter depth profiling；Journal of Surface Analysis, 9 (2002) 336；
薄膜中的扩散及相变 (Diffusion and phase transformation in thin films)
34.简 玮，林 冰，黄 琳，王江涌*；薄膜材料中的界面热力学；材料科学研究，2(2013) 58-68；
35.Lin Huang, Xuenian Lin, Renwu Chen and Jiangyong Wang*；Sn whisker growth in Cu (top)-Sn (bottom) bilayer system upon room temperature aging；Advanced Materials Research,785-786 (2013) 918-923.；
36.黄木香，杨琳，刘玉琪，王江涌*；非晶硅薄膜晶化过程的研究；真空 49, No.5, PP. 35-38, Sep. 2012.；
37.刘毅，黄木香，徐文武，陈仁武，魏少巍，王江涌*；铝诱导层交换的研究进展；汕头大学学报（自然科学版）2012, 27, No. 4, pp. 17-25.；
38.Z.M. Wang, L. Gu, F. Phillipp, J.Y. Wang, L.P.H. Jeurgens, E.J. Mittemeijer；Metal-Catalyzed Growth of Semiconductor Nanostructures without Solubility and Diffusivity Constraints；Advanced Materials 23, 854-859 (2011).；
39.Sobiech, M., C. Krüger, U. Welzel, J.Y. Wang, E.J. Mittemeijer and W. Hügel；Phase Formation at the Sn/Cu Interface during Room Temperature Aging: Microstructural Evolution, Whiskering, and Interface Thermodynamics；Journal of Materials Research 26, 1482-1493 (2011).；
40.Sobiech, M., C. Krüger, U. Welzel, J.Y. Wang, E.J. Mittemeijer and W. Hügel；Evolution of Microstructure and Stress of and Associated Whisker Growth on Sn Layers Sputter-Deposited on Cu Substrates；Journal of Materials Research 25, 2166-2174 (2010).；
41.ZM Wang, LPH Jeurgens, JY Wang and EJ Mittemeijer*；Advances in understanding metaled-induced crystallization of amorphous semiconductors；Advanced Engineering Materials, 11(2009)131；
42.ZM Wang*, LPH Jeurgens, JY Wang, F. Phillipp and EJ Mittemeijer；High-resolution transmission-electron-microscopy study of ultrathin Al-induced crystallization of amorphous Si；Journal of Materials Research, 24 (2009) 3294；
43.JY Wang*, ZM Wang, LPH Jeurgens and EJ Mittemeijer；Mechanisms of aluminum-induced crystallization and layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers；Journal of NanoScience and NanoTechnology, 9 (2009) 3364；
44.ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Origins of stress development during metal-induced crystallization and layer exchange: Annealing amorphous Ge/crystalline Al bilayers；Acta Materialia, 56 (2008) 5047；
45.D He, JY Wang* and EJ Mittemeijer；Crystallite size and micro- and macro-strain changes during layer exchange upon annealing amorphous silicon/crystalline aluminum；Zeitschrift für Kristallographie, 27 (2008) 193；
46.ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Thermodynamics and mechanism of metal-induced crystallization in immiscible alloy systems；Physical Review B, 77 (2008) 045424；
47.ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Tailoring the ultrathin Al-induced crystallization temperature of amorphous Si by interface thermodynamics；Physical Review Letters, 100 (2008) 125503；
48.ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；Investigation of metal-induced crystallization in amorphous Ge/crystalline Al bilayers by Auger microanalysis and selected-area depth profiling；Surface and Interface Analysis, 40 (2008) 427；
49.JY Wang*, ZM Wang and EJ Mittemeijer；Mechanism of aluminium-induced layer exchange upon low-temperature annealing of amorphous Si/polycrystalline Al bilayers；Journal of Applied Physics, 102 (2007) 113523；
50.ZM Wang, JY Wang*, LPH Jeurgens and EJ Mittemeijer；“Explosive”crystallization of amorphous germanium in Ge/Al layer systems; comparison with Si/Al layer systems；Scripta Materialia, 55 (2006) 987；
51.JY Wang*, D He, A Zalar and EJ Mittemeijer；Interdiffusion in microstructurally different Si/Al multilayered structures；Surface and Interface Analysis, 38 (2006) 773；
52.JY Wang*, D He, YH Zhao and EJ Mittemeijer；Origin of aluminium-induced crystallization of amorphous silicon；Applied Physics Letters, 88 (2006) 061910；
53.D He, JY Wang* and EJ Mittemeijer；Origins of interdiffusion, crystallization and layer exchange in crystalline Al / amorphous Si layer systems；Applied Surface Science, 252 (2006) 5470；
54.D He, JY Wang* and EJ Mittemeijer；Thermodynamic and kinetic criteria for layer exchange in amorphous silicon/crystalline aluminium bilayers during annealing；Scripta Materialia, 54 (2006) 559；
55.D He, JY Wang* and EJ Mittemeijer；The initial stage of the reaction between amorphous Si and crystalline Al；Journal of Applied Physics, 97 (2005) 093524；
56.D He, JY Wang* and EJ Mittemeijer；Reaction between amorphous Si and crystalline Al in Al/Si and Si/Al bilayers: microstructural and thermodynamic analysis of layer exchange；Applied Physics A, 80 (2005) 501；
57.YH Zhao, JY Wang* and EJ Mittemeijer；Initial interaction of crystalline Al/amorphous Si bilayer during annealing；MRS Proceedings, 808 (2004) A4.23；
58.YH Zhao, JY Wang* and EJ Mittemeijer；Microstructural changes in amorphous Si/crystalline Al thin bilayer films upon annealing；Applied Physics A, 79 (2004) 681；
59.A Zalar*, JY Wang, YH Zhao, EJ Mittemeijer and P. Panjan；AES depth profiling of thermally treated Al/Si thin-film structures；Vacuum, 71 (2003) 11；
60.YH Zhao, JY Wang* and EJ Mittemeijer；Interaction of amorphous Si and crystalline Al thin films during low-temperature annealing in vacuum；Thin Solid Films, 433 (2003) 82；
界面间的相互作用 (Interaction between interfaces)
61.BM Law*, A Mukhopadhyay, JR Henderson and JY Wang；Wetting of silicon wafers by n-alkanes；Langmuir, 19 (2003) 8380；
62.JY Wang, S Betelu and BM Law*；Line tension approaching the wetting transition: experimental results from contact angle measurement；Physical Review E. 63 (2001) 031601；
63.JY Wang, S Betelu and BM Law*；Line tension effects near first-order wetting transitions；Physical Review Letters, 83 (1999) 3677；
64.JY Wang, M Crawley and BM Law*；Contact angle hysteresis near a first-order wetting transition；Langmuir, 17 (2001) 299；
原子结构的计算 (Atomic structure calculations)
65.JH Xi, LJ Wu, BW Li* and JY Wang；Hyperfine interaction in Sc atomic structure；Chinese Journal of Atomic and Molecular Physics, S1 (1990) 52；
66.JY Wang*, FH Wang and QQ Gao；Exchange-correlation energy of the Be ground state；Chinese Journal of Atomic and Molecular Physics, 3 (1992) 2393；
67.JH Xi, LJ Wu, BW Li* and JY Wang；Hyperfine interaction of the Sc ground state；Physics Letters A, 152 (1991) 401；
68.JY Wang*, JH Xi, LJ Wu and BW Li；Exchange-correlation energies of beryllium and its isoelectronic sequence；Chinese Journal of Atomic and Molecular Physics, S1 (1990) 71；
注：* 为通讯作者 （corresponding author）